Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degra...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Lee, Hyung-Ik, Park, Jong-Bong, Xianyu, Wenxu, Kim, Kihong, Chung, Jae Gwan, Kyoung, Yong Koo, Byun, Sunjung, Yang, Woo Young, Park, Yong Young, Kim, Seong Min, Cho, Eunae, Shin, Jai Kwang
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group UK 2017
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5658330/
https://ncbi.nlm.nih.gov/pubmed/29074890
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-14291-2
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