Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bot...

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Publicat a:Nanoscale Res Lett
Autors principals: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Kozak, Oleksii, Kondratenko, Serhiy V., Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Lavoryk, Sergii R., Golovynska, Iuliia, Ohulchanskyy, Tymish Y., Qu, Junle
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5629186/
https://ncbi.nlm.nih.gov/pubmed/28983869
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2331-2
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