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Memory characteristics of silicon nanowire transistors generated by weak impact ionization
In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an o...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5622113/ https://ncbi.nlm.nih.gov/pubmed/28963456 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12347-x |
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