Lim, D., Kim, M., Kim, Y., & Kim, S. (2017). Memory characteristics of silicon nanowire transistors generated by weak impact ionization. Sci Rep.
Citação norma ChicagoLim, Doohyeok, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim. "Memory Characteristics of Silicon Nanowire Transistors Generated By Weak Impact Ionization." Sci Rep 2017.
Citação norma MLALim, Doohyeok, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim. "Memory Characteristics of Silicon Nanowire Transistors Generated By Weak Impact Ionization." Sci Rep 2017.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.