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Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications
In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a vacuum-sealed cavity employable for high temp...
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| Vydáno v: | Sensors (Basel) |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5621027/ https://ncbi.nlm.nih.gov/pubmed/28892010 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17092080 |
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