A carregar...
Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5610239/ https://ncbi.nlm.nih.gov/pubmed/28939802 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-11757-1 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|