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Difference in gating and doping effects on the band gap in bilayer graphene
A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate volt...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5595964/ https://ncbi.nlm.nih.gov/pubmed/28900237 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-11822-9 |
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