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Gap state analysis in electric-field-induced band gap for bilayer graphene
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of...
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| 出版年: | Sci Rep |
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| 主要な著者: | , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2015
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4625181/ https://ncbi.nlm.nih.gov/pubmed/26511395 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15789 |
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