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Gap state analysis in electric-field-induced band gap for bilayer graphene

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Kanayama, Kaoru, Nagashio, Kosuke
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group 2015
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4625181/
https://ncbi.nlm.nih.gov/pubmed/26511395
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15789
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