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Gap state analysis in electric-field-induced band gap for bilayer graphene

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of...

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Detalles Bibliográficos
Publicado en:Sci Rep
Main Authors: Kanayama, Kaoru, Nagashio, Kosuke
Formato: Artigo
Idioma:Inglês
Publicado: Nature Publishing Group 2015
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Acceso en liña:https://ncbi.nlm.nih.gov/pmc/articles/PMC4625181/
https://ncbi.nlm.nih.gov/pubmed/26511395
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15789
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