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Graphene Klein tunnel transistors for high speed analog RF applications
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electro...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5575307/ https://ncbi.nlm.nih.gov/pubmed/28852078 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-10248-7 |
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