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Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits
This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5554061/ https://ncbi.nlm.nih.gov/pubmed/28773037 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10060680 |
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