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Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition....

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Materials (Basel)
Prif Awduron: Li, Lianbi, Zang, Yuan, Hu, Jichao, Lin, Shenghuang, Chen, Zhiming
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: MDPI 2017
Pynciau:
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC5552176/
https://ncbi.nlm.nih.gov/pubmed/28772944
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10060583
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