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Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)
The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition....
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5552176/ https://ncbi.nlm.nih.gov/pubmed/28772944 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10060583 |
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