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Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irr...
Gardado en:
| Publicado en: | Materials (Basel) |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2017
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5551733/ https://ncbi.nlm.nih.gov/pubmed/28773052 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10070690 |
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