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On the influence of interface charging dynamics and stressing conditions in strained silicon devices
The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5543050/ https://ncbi.nlm.nih.gov/pubmed/28775297 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05067-9 |
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