Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions

Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). ‎This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the a...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Nanomaterials (Basel)
Egile Nagusiak: Yanagida, Yusuke, Oishi, Tomoya, Miyaji, Takashi, Watanabe, Chiaki, Nitta, Noriko
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: MDPI 2017
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5535246/
https://ncbi.nlm.nih.gov/pubmed/28696351
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7070180
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