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Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the a...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5535246/ https://ncbi.nlm.nih.gov/pubmed/28696351 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7070180 |
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