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Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires
We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is c...
Tallennettuna:
| Julkaisussa: | Nanoscale Res Lett |
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| Päätekijät: | , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer US
2017
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5533697/ https://ncbi.nlm.nih.gov/pubmed/28759987 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2243-1 |
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