Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is c...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Zhu, Zhongyunshen, Song, Yuxin, Chen, Qimiao, Zhang, Zhenpu, Zhang, Liyao, Li, Yaoyao, Wang, Shumin
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2017
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5533697/
https://ncbi.nlm.nih.gov/pubmed/28759987
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2243-1
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