Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is c...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Zhu, Zhongyunshen, Song, Yuxin, Chen, Qimiao, Zhang, Zhenpu, Zhang, Liyao, Li, Yaoyao, Wang, Shumin
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2017
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5533697/
https://ncbi.nlm.nih.gov/pubmed/28759987
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2243-1
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