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Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is c...

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Dettagli Bibliografici
Pubblicato in:Nanoscale Res Lett
Autori principali: Zhu, Zhongyunshen, Song, Yuxin, Chen, Qimiao, Zhang, Zhenpu, Zhang, Liyao, Li, Yaoyao, Wang, Shumin
Natura: Artigo
Lingua:Inglês
Pubblicazione: Springer US 2017
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Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5533697/
https://ncbi.nlm.nih.gov/pubmed/28759987
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2243-1
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