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Trap Exploration in Amorphous Boron-Doped ZnO Films
This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering. The as-deposited ZnO:B film is amorphous and bec...
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| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2015
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5512656/ https://ncbi.nlm.nih.gov/pubmed/28793534 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8095276 |
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