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Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (V...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Zheng, Guohui, Ke, San-Huang, Miao, Maosheng, Kim, Jinwoong, Ramesh, R., Kioussis, Nicholas
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5511149/
https://ncbi.nlm.nih.gov/pubmed/28710375
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05611-7
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