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Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition
Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (V...
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| Veröffentlicht in: | Sci Rep |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5511149/ https://ncbi.nlm.nih.gov/pubmed/28710375 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05611-7 |
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