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Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory...
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| Publicat a: | Nat Commun |
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| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5477493/ https://ncbi.nlm.nih.gov/pubmed/28604664 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms15841 |
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