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Controlling the on/off current ratio of ferroelectric field-effect transistors
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2015
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4498189/ https://ncbi.nlm.nih.gov/pubmed/26160465 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12094 |
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