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Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene
Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabric...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5469745/ https://ncbi.nlm.nih.gov/pubmed/28611452 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-03264-0 |
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