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Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He(+) ions with 1 × 10(17) ions/cm(2) fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. A...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Materials (Basel)
मुख्य लेखकों: Shen, Qiang, Zhou, Wei, Ran, Guang, Li, Ruixiang, Feng, Qijie, Li, Ning
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: MDPI 2017
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC5459187/
https://ncbi.nlm.nih.gov/pubmed/28772459
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10020101
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