ロード中...
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carri...
保存先:
| 出版年: | Nat Commun |
|---|---|
| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2017
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5458150/ https://ncbi.nlm.nih.gov/pubmed/28530233 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms15387 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|