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Characterizations of Rapid Sintered Nanosilver Joint for Attaching Power Chips

Sintering of nanosilver paste has been extensively studied as a lead-free die-attach solution for bonding semiconductor power chips, such as the power insulated gated bipolar transistor (IGBT). However, for the traditional method of bonding IGBT chips, an external pressure of a few MPa is reported n...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Materials (Basel)
Päätekijät: Feng, Shuang-Tao, Mei, Yun-Hui, Chen, Gang, Li, Xin, Lu, Guo-Quan
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2016
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5456888/
https://ncbi.nlm.nih.gov/pubmed/28773686
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9070564
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