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Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement
Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in det...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5456006/ https://ncbi.nlm.nih.gov/pubmed/28788225 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7106965 |
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