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Grain size dependence of dielectric relaxation in cerium oxide as high-k layer
Cerium oxide (CeO(2)) thin films used liquid injection atomic layer deposition (ALD) for deposition and ALD procedures were run at substrate temperatures of 150°C, 200°C, 250°C, 300°C, and 350°C, respectively. CeO(2) were grown on n-Si(100) wafers. Variations in the grain sizes of the samples are go...
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| Glavni autori: | , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer
2013
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3639797/ https://ncbi.nlm.nih.gov/pubmed/23587419 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-172 |
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