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Spectral dependence of carrier lifetimes in silicon for photovoltaic applications
Charge carrier lifetimes in photovoltaic-grade silicon wafers were measured by a spectral-dependent, quasi-steady-state photoconductance technique. Narrow bandwidth light emitting diodes (LEDs) were used to excite excess charge carriers within the material, and the effective lifetimes of these carri...
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| 出版年: | J Appl Phys |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5455797/ https://ncbi.nlm.nih.gov/pubmed/28584383 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4972409 |
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