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Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices
High permittivity (k) gate dielectric films are widely studied to substitute SiO(2) as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO(2) gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one,...
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| Udgivet i: | Materials (Basel) |
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| Hovedforfatter: | |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2012
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5448936/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma5081413 |
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