טוען...
Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi(2)Ta(2)O(9)/(HfO(2))(x)(Al(2)O(3))(1−x) (Hf-Al-O) and Pt/SrBi(2)Ta(2)O(9)/HfO(2) gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-st...
שמור ב:
| הוצא לאור ב: | Materials (Basel) |
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| Main Authors: | , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI
2010
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5445777/ https://ncbi.nlm.nih.gov/pubmed/28883363 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma3114950 |
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