Á lódáil...
Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi(2)Ta(2)O(9)/(HfO(2))(x)(Al(2)O(3))(1−x) (Hf-Al-O) and Pt/SrBi(2)Ta(2)O(9)/HfO(2) gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-st...
Na minha lista:
| Foilsithe in: | Materials (Basel) |
|---|---|
| Main Authors: | , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2010
|
| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5445777/ https://ncbi.nlm.nih.gov/pubmed/28883363 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma3114950 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
|