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Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge(1−x)Sn(x)) Fin Structure
We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge(1−x)Sn(x)) materials. The digital etch approach consists of Ge(1−x)Sn(x) oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a s...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5431783/ https://ncbi.nlm.nih.gov/pubmed/28500296 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-01449-1 |
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