טוען...
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0....
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2017
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5415765/ https://ncbi.nlm.nih.gov/pubmed/28470166 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep46670 |
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