Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

Por Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Publicado no Sci Rep (2017)

Quantum simulation of the Hubbard model with dopant atoms in silicon

Por Salfi, J., Mol, J. A., Rahman, R., Klimeck, G., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Publicado no Nat Commun (2016)

Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

Por House, M. G., Kobayashi, T., Weber, B., Hile, S. J., Watson, T. F., van der Heijden, J., Rogge, S., Simmons, M. Y.
Publicado no Nat Commun (2015)

Two-electron spin correlations in precision placed donors in silicon

Por Broome, M. A., Gorman, S. K., House, M. G., Hile, S. J., Keizer, J. G., Keith, D., Hill, C. D., Watson, T. F., Baker, W. J., Hollenberg, L. C. L., Simmons, M. Y.
Publicado no Nat Commun (2018)