Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up...

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Foilsithe in:Proc Natl Acad Sci U S A
Main Authors: Bae, Sang-Hoon, Zhou, Xiaodong, Kim, Seyoung, Lee, Yun Seog, Cruz, Samuel S., Kim, Yunjo, Hannon, James B., Yang, Yang, Sadana, Devendra K., Ross, Frances M., Park, Hongsik, Kim, Jeehwan
Formáid: Artigo
Teanga:Inglês
Foilsithe: National Academy of Sciences 2017
Ábhair:
Physical Sciences
Rochtain Ar Líne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5402461/
https://ncbi.nlm.nih.gov/pubmed/28373575
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1620176114
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