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PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflecti...
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| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2017
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5395514/ https://ncbi.nlm.nih.gov/pubmed/28423865 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2049-1 |
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