Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

[Image: see text] The ability of core–shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate str...

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Publicat a:Nano Lett
Autors principals: Conesa-Boj, S., Li, A., Koelling, S., Brauns, M., Ridderbos, J., Nguyen, T. T., Verheijen, M. A., Koenraad, P. M., Zwanenburg, F. A., Bakkers, E. P. A. M.
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2017
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5391496/
https://ncbi.nlm.nih.gov/pubmed/28231017
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.6b04891
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