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Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through se...
में बचाया:
| में प्रकाशित: | Beilstein J Nanotechnol |
|---|---|
| मुख्य लेखकों: | , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Beilstein-Institut
2015
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4660882/ https://ncbi.nlm.nih.gov/pubmed/26665068 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.6.201 |
| टैग : |
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