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Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures
In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage characterist...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5391343/ https://ncbi.nlm.nih.gov/pubmed/28410550 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2043-7 |
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