Effect of Ionizing Radiation on the Properties of Porous Silicon Nanostructures
The influence of ionizing radiation from 226Ra source on the electrical and photoluminescent properties of porous silicon nanostructures was investigated. After the radiation exposure, AC resistance of experimental samples decreased and luminescence band was changed. Temperature dependencies of elec...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sumy State University
2015-12-01
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| coleção: | Журнал нано- та електронної фізики |
| Assuntos: | |
| Acesso em linha: | http://jnep.sumdu.edu.ua/download/numbers/2015/4/articles/jnep_2015_V7_04063.pdf |
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