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Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN’s hexagonal structure, which involves defects or grain boundaries (GBs) engine...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5377335/ https://ncbi.nlm.nih.gov/pubmed/28367992 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45584 |
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