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Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN’s hexagonal structure, which involves defects or grain boundaries (GBs) engine...
Guardat en:
| Publicat a: | Sci Rep |
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| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5377335/ https://ncbi.nlm.nih.gov/pubmed/28367992 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45584 |
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