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Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg(Ga) δ doping in (AlN)(m)/(GaN)(n) superlattice
P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)(5...
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| Foilsithe in: | Sci Rep |
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| Main Authors: | , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group
2017
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5349601/ https://ncbi.nlm.nih.gov/pubmed/28290480 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep44223 |
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