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Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should po...
Uloženo v:
| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5333630/ https://ncbi.nlm.nih.gov/pubmed/28252656 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep43666 |
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