Spin-texture inversion in the giant Rashba semiconductor BiTeI

Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structur...

Täydet tiedot

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Bibliografiset tiedot
Julkaisussa:Nat Commun
Päätekijät: Maaß, Henriette, Bentmann, Hendrik, Seibel, Christoph, Tusche, Christian, Eremeev, Sergey V., Peixoto, Thiago R. F., Tereshchenko, Oleg E., Kokh, Konstantin A., Chulkov, Evgueni V., Kirschner, Jürgen, Reinert, Friedrich
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2016
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4873970/
https://ncbi.nlm.nih.gov/pubmed/27188584
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11621
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