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Ferroelectric symmetry-protected multibit memory cell
The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limi...
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| 發表在: | Sci Rep |
|---|---|
| Main Authors: | , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group
2017
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5297243/ https://ncbi.nlm.nih.gov/pubmed/28176866 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep42196 |
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