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Multibit memory operation of metal-oxide bi-layer memristors
Emerging nanoionic memristive devices are considered as the memory technology of the future and have been winning a great deal of attention due to their ability to perform fast and at the expense of low-power and -space requirements. Their full potential is envisioned that can be fulfilled through t...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5727485/ https://ncbi.nlm.nih.gov/pubmed/29235524 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-17785-1 |
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