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Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15...
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| Publicat a: | Beilstein J Nanotechnol |
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| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Beilstein-Institut
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5238691/ https://ncbi.nlm.nih.gov/pubmed/28144560 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.8.2 |
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